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Preparation of High-Purity Gallium from Semiconductor Fabrication Waste

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Inorganic Materials Aims and scope

Abstract

Processes are examined for fine purification of metallurgical-grade gallium recovered from various semiconductor waste materials based on GaAs and GaP. A classification is proposed for major Ga-containing waste materials. With allowance made for the behavior of impurities during the purification of metallurgical-grade gallium by different techniques, a multistep process is devised for preparing high-purity (99.9999%) gallium. The products of this process compare well with materials produced from conventional starting reagents and are suitable for the preparation of high-quality compound semiconductors.

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Authors and Affiliations

  1. Research Institute of Electronic Materials, ul. Gagarina 1, Kaluga, 248650, Russia

    S. A. Kozlov, N. A. Potolokov, M. P. Aganichev, O. L. Sidorov, M. V. Sazhin & I. O. Petrukhin

  2. Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry, Leninskii pr. 31, Moscow, 119991, Russia

    V. A. Fedorov

Authors
  1. S. A. Kozlov
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  2. N. A. Potolokov
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  3. V. A. Fedorov
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  4. M. P. Aganichev
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  5. O. L. Sidorov
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  6. M. V. Sazhin
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  7. I. O. Petrukhin
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Kozlov, S.A., Potolokov, N.A., Fedorov, V.A. et al. Preparation of High-Purity Gallium from Semiconductor Fabrication Waste. Inorganic Materials 39, 1257–1266 (2003). https://doi.org/10.1023/B:INMA.0000008910.85474.cb

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  • DOI: https://doi.org/10.1023/B:INMA.0000008910.85474.cb

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