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Structural Perfection of Four-Layer Ga x In1 – x As y P1 – y Laser Heterostructures

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Abstract

The structural perfection and coherent growth conditions of epitaxial layers in four-layer Ga x In1 – x As y P1 – y heterostructures on InP(001) substrates were studied by x-ray diffraction and topography. The composition of the active layer corresponded to a peak photoluminescence wavelength of 1.34 μm. The coherent growth region was delineated, and the critical thickness of epitaxial layers was determined as a function of the interfacial lattice mismatch. The critical thickness determined experimentally exceeds the calculated value. It is shown that heterostructures up to 9 μm in layer thickness, free of interfacial dislocations can be grown in a broad range of elastic strains in adjacent layers.

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  1. Russian Academy of Sciences, Institute of Chemistry of High-Purity Substances, ul. Tropinina 49, Nizhni Novgorod, 603950, Russia

    V. S. Krasilnikov

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Krasilnikov, V.S. Structural Perfection of Four-Layer Ga x In1 – x As y P1 – y Laser Heterostructures. Inorganic Materials 39, 1233–1238 (2003). https://doi.org/10.1023/B:INMA.0000008906.64801.b5

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  • DOI: https://doi.org/10.1023/B:INMA.0000008906.64801.b5

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