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Investigation of Microinhomogeneities in a-SiC r :H Films Using the Chemical Induction Model

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Abstract

Amorphous hydrogenated silicon–carbon (a-SiC r :H) films grown by decomposing silane–methane mixtures in a low-frequency (55 kHz) glow discharge at different methane concentrations are studied by IR spectroscopy. The absorption band in the range 1850–2300 cm–1 is decomposed into four Gaussian components, and the results are compared with calculations in the chemical induction model. It is found that the carbon atoms are nonuniformly distributed in the nearest neighbor environment of the SiH groups in the form of HSi–Si3 – n C n (n= 0–3) structures. The random bonding model is used to evaluate the probability of formation of each HSi–Si3 – n C n structure as a function of the C/Si ratio. Comparison with experimental data points to an inhomogeneous microstructure of the films.

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  1. Moscow Institute of Electronic Engineering, (Technical University), Zelenograd, Moscow, 103498, Russia

    B. G. Budagyan, A. A. Sherchenkov & E. I. Artemov

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  1. B. G. Budagyan
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  2. A. A. Sherchenkov
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  3. E. I. Artemov
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Budagyan, B.G., Sherchenkov, A.A. & Artemov, E.I. Investigation of Microinhomogeneities in a-SiC r :H Films Using the Chemical Induction Model. Inorganic Materials 39, 1221–1226 (2003). https://doi.org/10.1023/B:INMA.0000008904.39870.f8

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  • DOI: https://doi.org/10.1023/B:INMA.0000008904.39870.f8

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