Skip to main content
SpringerLink
Log in

Novel 53/106 GHz Dual-Band MMW LC Oscillator Implemented in SiGe BiCMOS Technology

  • Published:
International Journal of Infrared and Millimeter Waves Aims and scope Submit manuscript

Abstract

In this Paper, we present a fully integrated millimeter wave LC voltage-controlled oscillator (VCO), which employs a novel topology, operating at dual-band frequency of 53.22 GHz-band and 106.44 GHz-band. The low-phase noise performance of −107.3 dBc/Hz and −106.1 dBc/Hz at the offset frequency of 600 kHz, −111.8 dBc/Hz and −110.6 dBc/Hz at the offset frequency of 1 MHz around 53.22 GHz and 106.44 GHz are achieved using IBM BiCMOS-6HP technology, respectively. Two tuning ranges, of 52.7 - 53.8 GHz and 105.4 - 107.6 GHz for the proposed LC VCO are obtained. The output voltage swing of this VCO is around 1.8 Vp-p at the operation frequency of 53.22 GHz and 0.45 Vp-p at 106.44 GHz; the total power consumption is about 16.5 mW. To our knowledge, this is the first oscillator which operates at dual-band frequency above 50 GHz with the best preformance.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

REFERENCES

  1. Y. Kwon, Large signal analysis and experimental characteristics of monolithic InP-based W-band HEMT oscillator, in 21th European Microwave Conf. Tech Dig., Stuttgart, Germany, Sept. 1991, pp.99-101.

    Google Scholar 

  2. H. Li, H.-M. Rein, R. Kreienkamp, and W. Klein, 47 GHz VCO with low phase noise fabricated in a SiGe bipolar production technology, in IEEE Microwave and Wireless Components Letters, vol. 12, pp. 79-81, Mar. 2002.

    Google Scholar 

  3. A. Kurdoghlian, M. Sokolich, M. Case, M. Micovic, S. Thomas, and C. H. Fields, 38 GHz low phase noise CPW monolithic VCOs implemented in manufacturable AIInAs/InGaAs HBT IC technology, in IEEE GaAs IC Symp. 2000 Tech. Dig., pp. 99-102.

  4. H. Wang, K.-W. Chang, D. C.-W. Lo, and L. T. Tran, A 62 GHz monolithic InP-based HBT VCO, in IEEE Microwave Guided Wave Letters, vol.5, pp. 388-390, Nov. 1995.

    Google Scholar 

  5. H. Wang, A 50 GHz VCO in 0.25μm CMOS, in IEEE Solid State Circuits Conference, 2001 Tech. Dig., pp. 372-373.

  6. IBM BiCMOS-6HP Model Reference Guide, pp. 3-144.

  7. J. Strange, S. Atkinson, A direct conversion transceiver for multi-band GSM applications, in IEEE RF IC Symp. 2000, Dig., pp. 25-28.

  8. H. Darabi, A 2.4 GHz CMOS transceiver for Bluetooth, in IEEE Solid State Circuits Conference Tech., Dig., Feb. 2001, pp.

  9. A. Hajimiri and T. H. Lee, The design of low noise oscillators, Kluwer Academic Publishers Boston/Dordrecht/London. 1998.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. RFIC Group, Centre for Integrated Circuit & Systems (CICS), Nanyang Technological University, Singapore, 639798

    Lin Jia, Jian Guo Ma, Kiat Seng Yeo & Manh Anh Do

Authors
  1. Lin Jia
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Jian Guo Ma
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Kiat Seng Yeo
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Manh Anh Do
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Jia, L., Ma, J.G., Yeo, K.S. et al. Novel 53/106 GHz Dual-Band MMW LC Oscillator Implemented in SiGe BiCMOS Technology. International Journal of Infrared and Millimeter Waves 25, 55–62 (2004). https://doi.org/10.1023/B:IJIM.0000012762.86463.fb

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/B:IJIM.0000012762.86463.fb

Search

Navigation