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Inertial Flight Mode and Semiconductor Segregation Patterns

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Abstract

In this work, a 2D time-dependent Bridgman model has been used to analyze the impact of the inertial flight mode on the resulting crystal dopant homogeneity. To be as near as possible to the experimentalists, the discussion has been based on the computed solid dopant segregation. Excepting a few cases at the lowest value of gravity, 1 μg, the model is amazingly sensitive to the orbital characteristics. In effect, alternated dopant structures appear recorded in the solid phases as clear fingerprints of the nonlinear vibroconvective flow effects acting along the simulated growth processes. Thus, to improve crystal homogeneity, some strategies should be introduced to eliminate also these pernicious effects.

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Authors and Affiliations

  1. Applied Physics Lab., Universitat Rovira i Virgili, Tarragona, Spain

    X. Ruiz

  2. Institut d'Estudis Espacials de Catalunya, IEEC, Barcelona, Spain

    X. Ruiz

  3. Institute for Problems in Mechanics, Russian Academy of Sciences, Moscow, Russia

    M. Ermakov

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  1. X. Ruiz
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  2. M. Ermakov
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Ruiz, X., Ermakov, M. Inertial Flight Mode and Semiconductor Segregation Patterns. Cosmic Research 42, 129–136 (2004). https://doi.org/10.1023/B:COSM.0000025976.52234.ad

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  • DOI: https://doi.org/10.1023/B:COSM.0000025976.52234.ad

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