Abstract
Two fully integrated silicon bipolar LNAs at 8 and 12 GHz are presented. Both circuits provide simultaneous noise and input impedance matching. Resonant loads, designed for 50-Ω output matching, are also included. Moreover, the noise and input impedance self-matching trend of the cascode topology in the X and Ku bands was also explored and the design of integrated spiral inductors was discussed. From an on-wafer test, the 8 and the 12-GHz LNAs exhibit a power gain of 11.5 and 8 dB and a noise figure of 2.6 and 4.7 dB, respectively. This performance was achieved with bias currents as low as 4 mA for each circuit. The two LNAs were fabricated in a 46-GHz-f T pure bipolar technology.
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Girlando, G., Ragonese, E. & Palmisano, G. Silicon Bipolar LNAs in the X and Ku Bands. Analog Integrated Circuits and Signal Processing 41, 119–127 (2004). https://doi.org/10.1023/B:ALOG.0000041629.52175.6a
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DOI: https://doi.org/10.1023/B:ALOG.0000041629.52175.6a