Abstract
Singe-event upsets (SEUs) caused by high-energy protons are considered. An analytical model is proposed to represent the dependence of SEU cross section on proton energy. The model is based on a simple mechanism of proton-induced nuclear reactions in silicon. A computer simulation is conducted by the model. The results are found to agree with previous experiments. They indicate that the model enables one to predict susceptibility to proton-induced SEUs on the basis of a single value of SEU cross section measured at a proton energy higher than 100 MeV. It is shown that the approach may also work for heavy ions.
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Chumakov, A.I. One-Parameter Model for the Estimation of IC Susceptibility to Proton-Induced Single-Event Upsets. Russian Microelectronics 33, 92–98 (2004). https://doi.org/10.1023/B:RUMI.0000018713.85907.5a
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DOI: https://doi.org/10.1023/B:RUMI.0000018713.85907.5a