Abstract
Kinetic measurements were used to assess the effects of N2O, NO, and diethylamine on the chemical vapor deposition of SiO2 films on Si from hexamethyldisiloxane and the effect of diethylamine on the deposition of Al2O3 films on Si, GaAs, and InP from aluminum acetylacetonate. The composition of the films was determined by electron probe x-ray microanalysis and Auger electron spectroscopy. The deposition kinetics and properties of the films are correlated with the nature of the gaseous admixture and process parameters.
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Mittov, O.N., Ponomareva, N.I., Mittova, I.Y. et al. Deposition of Al2O3 and SiO2 Films via Pyrolysis of Aluminum Acetylacetonate and Hexamethyldisiloxane in the Presence of Nitrogen Compounds. Inorganic Materials 36, 1243–1250 (2000). https://doi.org/10.1023/A:1026685715881
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DOI: https://doi.org/10.1023/A:1026685715881