Abstract
Electrochemical formation of deep layers of porous silicon (PS) in monocrystalline silicon of type KEF-20 in electrolytes containing formic and acetic acids is studied. It is found that the chemisorption of carboxylic acids affects electrochemical parameters of the PS formation and the microstructure of its layers. It is shown that the chemisorption and the surface-active properties of acetic acid make the microstructure of porous layers more ordered.
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Baranov, I.L., Tabulina, L.V., Stanovaya, L.S. et al. Effect of Monocarboxylic Acids on Synthesis of Porous Silicon. Russian Journal of Electrochemistry 36, 1338–1340 (2000). https://doi.org/10.1023/A:1026624319032
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DOI: https://doi.org/10.1023/A:1026624319032