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A GaAs–InGaAs optoelectronic switch with multiple operation states

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Abstract

An optoelectronic switch with both n- and p-type delta-doped (δ-doped) quantum wells was investigated. The δ-doped structures formed potential wells for the carrier accumulation and potential barriers for the carrier injection. Being possessed of δ-doped sheets with different doping levels, the potential barriers were sequentially collapsed to produce a double negative-differential-resistance (NDR) phenomenon in the current–voltage (I–V) characteristics of the device, due to the carrier accumulation in the potential wells. The device also showed an optical function related to the barrier heights controllable by incident light.

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Authors and Affiliations

  1. Department of Electronic Engineering, Chinese Air Force Academy, P.O. Box 14-49 Kang-shan, Kuohsiung County, Taiwan, ROC

    Der-Feng Guo

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  1. Der-Feng Guo
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Guo, DF. A GaAs–InGaAs optoelectronic switch with multiple operation states. Optical and Quantum Electronics 32, 1301–1306 (2000). https://doi.org/10.1023/A:1026584005489

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  • DOI: https://doi.org/10.1023/A:1026584005489

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