Abstract
Hot-isostatically pressed silicon oxynitride (Si2N2O) ceramics free from sintering aids were oxidized in 1 atm dry oxygen at 1100 and 1300°C. The structural and chemical characteristics of the oxide and the nature of the oxide–Si2N2O interface were determined using cross-sectional transmission electron microscopy in conjunction with small-probe energy dispersive X-ray analysis and selected-area electron diffraction. Oxidation of Si2N2O resulted in the formation of amorphous SiO2. The oxide–Si2N2O interface was chemically abrupt. The interface was very flat when parallel to low-index, high atomic density Si2N2O crystal planes but became notably undulated if oriented to high index, low atomic density planes. About 6 vol% residual SiO2 phase was present in the bulk of the Si2N2O ceramics. Current results have provided an important baseline for the understanding of the oxidation behaviour of Si2N2O. © 1998 Kluwer Academic Publishers
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References
M. Washburn, Am. Ceram. Soc. Bull. 46 (1967) 667.
M. Billy, P. Boch, C. Dumazeau, J. C. Glandus and P. Goursat, Ceram. Int. 7 (1981) 13.
M. Ohashi, S. Kanzaki and H. Tabata, J. Am. Ceram. Soc. 74 (1991) 109.
P. Goursat, P. Lortholary, T. Tetard and M. Billy, in “Proceedings of the 7th International Symposium on Reactivity of Solids”, edited by J. S. Anderson, M. W. Roberts and F. S. Stone (Halsted Press, New York, 1972) p. 315.
R. Larker, J. Am. Ceram. Soc. 75 (1992) 62.
P. Boch and J. C. Glandus, J. Mater. Sci. 14 (1979) 379.
H. Du, R. E. Tressler, K. E. Spear and C. G. Pantano, J. Electrochem. Soc. 136 (1989) 1527.
H. Du, R. E. Tressler and K. E. Spear, J. Electrochem. Soc. 136 (1989) 3210.
L. U. J. T. Ogbuji, J. Am. Ceram. Soc. 75 (1992) 2995.
J. Persson, P. O. Kall and M. Nygren, ibid. 75 (1992) 3377.
C. O'Meara, J. Sjoberg, G. Dunlop and R. Pompe, J. Eur. Ceram. Soc. 7 (1991) 369.
“Powder Diffraction File (Inorganic Compounds)”, Card No. 33-1162, (Joint Committee on Powder Diffraction Standards, Swarthmore, PA, 1977).
I. Idrestedt and C. Brosset, Act. Chem. Scand. 18 (1964) 1879.
C. Brosset and I. Idrestedt, Nature Vol. 201 (1964) 1211.
H. Akatsu and I. Odhomari, Appl. Surf. Sci. 41/42 (1989) 357.
F. M. Ross and W. M. Stobbs, Surf. Interface Anal. 12 (1988) 35.
B. E. Deal and A. S. Grove, J. Appl. Phys, 36 (1965) 3770.
A. H. Carim and R. Sinclair, J. Electrochem. Soc. 134 (1987) 741.
M. Niwa, M. Matsumoto, H. Isawaki, M. Onada and R. Sinclair, J. Electrochem. Soc. 139 (1992) 901.
B. Hornetz, H-J. Michel and J. Halbritter, J. Mater. Res. 9 (1994) 3088.
L. U. J. T. Ogbuji and J. L. Smialek, J. Electrochem. Soc. 138 (1991) L51.
L. U. J. T. Ogbuji, ibid. 138 (1991) L53.
Idem, J. Am. Ceram. Soc. 78 (1995) 1279.
H. Du, R. E. Tressler, K. E. Spear and M. Wang, J. Mater. Sci. Lett. 8 (1989) 1341.
M. Backhaus-ricoult and Y. G. Gogotsi, J. Mater. Res. 10 (1995) 2306.
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Manessis, D., Du, H. & Larker, R. Oxide and interface characteristics of oxidized silicon oxynitride ceramics – an investigation by electron microscopy. Journal of Materials Science 33, 4447–4453 (1998). https://doi.org/10.1023/A:1026449331258
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DOI: https://doi.org/10.1023/A:1026449331258