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Interrelation between the Parameters of Chemical Vapor Deposition, Properties, and Structure of Borophosphosilicate Glass Films Used in the Silicon Integrated Circuit Technology

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Abstract

The results of investigations into the processes occurring in the course of the synthesis, the physicochemical properties, and the compositions of thin borophosphosilicate glass films with phosphorus and boron at a total content up to 30 wt % are generalized. The films are prepared using four chemical vapor deposition methods at deposition temperatures ranging from 380 to 520°C, followed by heat treatment at temperatures of 700–950°C. It is demonstrated that the substantial differences in the properties of the glass films studied can be explained by two factors. The first factor is associated with the porosity of glass films and the occurrence of boron atoms in the threefold coordination with respect to oxygen in the glass. The second factor involves the total content of phosphorus and boron oxides, the concentration of phosphorus oxide clusters embedded into the glass structure, and their sizes. A novel approach is proposed for the characterization of the chemical stability of thin glass films used in the technology of silicon integrated circuits.

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REFERENCES

  1. Vapor Deposition, Powell, C.W., Oxley, J.H, and Blocher, J.M., Eds., New York: Wiley, 1968. Translated under the title Osazhdenie iz gazovoi fazy, Moscow: Atomizdat, 1970.

  2. Razuvaev, G.A., Gribov, B.G., Domrachev, G.A., and Solomatin, B.A., Metalloorganicheskie soedineniya v elektronike (Organometallic Compounds in Electronics), Moscow: Nauka, 1972, pp. 172–176.

    Google Scholar 

  3. Tauber, R., Chemical Vapor Deposition of Amorphous and Polycrystalline Thin Films, in Silicon Processing for VLSI Era, Wolf, S., Ed., Sunset Beach: Lattice, 1986, vol. 1, pp. 161–197.

    Google Scholar 

  4. Adams, A.C., Deposition of Dielectric Films and Polycrystalline Silicon, in VLSI Technology, Sze, S.M., Ed., New York: McGraw-Hill, 1983. Translated under the title Tekhnologiya SBIS, Moscow: Mir, 1986.

    Google Scholar 

  5. Dukhanova, T.G., Vasilev, V.Yu., and Veretenin, Yu.I., Preparation, Properties, and Application of Borophosphosilicate Glass Films in Integrated Circuit Technology, Obzory Elektron. Tekh., Ser. 3, Moscow: TsNII "Elektronika," 1988, issue 4, pp. 1–72.

    Google Scholar 

  6. Vassiliev, V.Y., Modern BPSG Film Technology, in Visual Booklet of Short Courses at IV International Dielectric for ULSI Multilevel Interconnection Conference, Santa Clara (USA), 1998, pp. 111–192.

  7. Vasilev, V.Yu. and Dukhanova, T.G., Vapor Phase Deposition and Properties of Borophosphosilicate Glass Films, Khim. Fiz., 1992, vol. 11, no. 12, pp. 1699–1710.

    Google Scholar 

  8. Vasilev, V.Yu., Regularities of the Growth of Borophosphosilicate Glass Films upon Chemical Vapor Deposition, Zh. Fiz. Khim., 1999, vol. 73, no. 7, pp. 1191–1198.

    Google Scholar 

  9. Vasilev, V.Yu., Interrelation between the Properties of Borophosphosilicate Glass Films and the Growth Conditions upon Chemical Vapor Deposition, Zh. Fiz. Khim., 1999, vol. 73, no. 8, pp. 1351–1356.

    Google Scholar 

  10. Vasilev, V.Yu., Properties of Vapor-Deposited Borophosphorosilicate Glass Layers Employed in Technology of Silicon Integrated Circuits, Fiz. Khim. Stekla, 2000, vol. 26, no. 1, pp. 116–129 [Glass Phys. Chem. (Engl. transl.), 2000, vol. 26, no. 1, pp. 83–92].

    Google Scholar 

  11. Vassiliev, V.Y., Zheng, J.Z., Tang, S.K., Lu, W., Hua, J., and Lin, Y.S., Growth Kinetics and Deposition-Related Properties of Subatmospheric-Pressure Chemically Vapor Deposited Borophosphosilicate Glass Films, J. Electrochem. Soc., 1999, vol. 146, no. 8, pp. 3039–3051.

    Google Scholar 

  12. Vassiliev, V.Y., Evolution of Borophosphosilicate Glass Film Defects, J. Dielectrics ULSI Multilevel Interconnection, 1999, vol. 1, no. 1, pp. 15–28.

    Google Scholar 

  13. Vasilev, V.Yu., On the Nature of Defects and Mechanism of Their Formation in Thin Borophosphosilicate Glass Layers Produced by Vapor Deposition upon Fabrication of Integrated Circuits, Fiz. Khim. Stekla, 2000, vol. 26, no. 1, pp. 130–145 [Glass Phys. Chem. (Engl. transl.), 2000, vol. 26, no. 1, pp. 93–103].

    Google Scholar 

  14. Vasilev, V.Yu. and Sukhov, M.S., Equipment and Technique for Low-Pressure Vapor Deposition of Films: Part1, Obzory Elektron. Tekh., Ser. 7, Moscow: TsNII "Elektronika," 1985, issue 3, pp. 1–46.

    Google Scholar 

  15. Vasilev, V.Yu. and Sukhov, M.S., Equipment and Technique for Low-Pressure Vapor Deposition of Films: Part2, Obzory Elektron. Tekh., Ser. 7, Moscow: TsNII "Elektronika," 1985, issue 4, pp. 1–52.

    Google Scholar 

  16. Lu, W., Vassiliev, V.Y., Zheng, J.Z., and Chan, L., Comparison of Sub-Atmospheric BPSG Films with Plasma Enhanced BPSG Films, Proceedings of III International Dielectric for ULSI Multilevel Interconnection Conference, Santa Clara (USA), 1997, pp. 219–222.

  17. Pliskin, U.A., Kerr, D.R., and Perri, D.A., Thin Vitreous Films, in Physics of Thin Films (Advances in Research and Development), Hass, G. and Thun, R.E., Eds., New York: Academic, 1968, vol. 4. Translated under the title Fizika tonkikh plenok, Moscow: Mir, 1970.

    Google Scholar 

  18. Kolesvova, V.A., Borophosphate Glasses, Fiz. Khim. Stekla, 1981, vol. 7, no. 6, pp. 641–646.

    Google Scholar 

  19. Lipkin, L.A., Real-Time Oxidation Monitoring with a Surface Charge Analyzer, J. Electrochem. Soc., 1993, vol. 140, no. 8, pp. 2328–2332.

    Google Scholar 

  20. Dyer, T.W., Moisture Instability of Borophosphosilicate Glass and the Effects of Thermal Treatment, J. Electrochem. Soc., 1998, vol. 145, no. 11, pp. 3950–3956.

    Google Scholar 

  21. Yoshimaru, M. and Matsuhashi, H., Moisture Resistance of Annealed Borophosphosilicate Glass Films for Very Large Scale Integrated Circuit Applications, J. Electrochem. Soc., 1996, vol. 143, no. 9, pp. 3032–3037.

    Google Scholar 

  22. Kolesova, V.A., Structural Investigation of Oxide Glasses by Vibrational Spectroscopy, Fiz. Khim. Stekla, 1983, vol. 9, no. 3, pp. 257–266.

    Google Scholar 

  23. Boron Compounds, Encyclopedia of Chemical Technology, New York: Wiley, 1992, vol. 4, pp. 360–418.

  24. Wang, C.Y., Vassiliev, V.Y., Tan, K.W., and Sudijono, J.L., Properties of Subatmospheric Pressure Borophosphosilicate Glass Films Annealed at Low Thermal Budget Conditions, Proceedings of VI International Dielectric for ULSI Multilevel Interconnection Conference, Santa Clara (USA), 2000, pp. 244–252.

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  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, Novosibirsk, 630090, Russia

    V. Yu. Vasilev

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Vasilev, V.Y. Interrelation between the Parameters of Chemical Vapor Deposition, Properties, and Structure of Borophosphosilicate Glass Films Used in the Silicon Integrated Circuit Technology. Glass Physics and Chemistry 29, 461–470 (2003). https://doi.org/10.1023/A:1026386929586

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