Rectifying pyronine-B/p-type silicon junctions formed by sublimation of pyronine-B

Abstract

The rectifying junction characteristics of the organic compound pyronine-B film on a p-type Si substrate have been studied. The pyronine-B has been sublimed onto the top of p-Si surface. The barrier height and ideality factor values of 0.79 eV and 1.125 for this structure have been obtained from the forward-bias current–voltage characteristics. The density distribution of the interface states in the inorganic semiconductor bandgap and their relaxation time have been determined from the low-capacitance–frequency characteristics by the Schottky capacitance spectroscopy method. The measurement frequency varies from 90 Hz to 10 MHz. The interface state density N_ss ranges from 2.10×10¹⁰ cm⁻² eV⁻¹ in (0.79−E_v) eV to 1.16×10¹² cm⁻² eV⁻¹ in (0.53−E_v) eV. Furthermore, the relaxation time ranges from 1.38×10⁻³ s in (0.53−F_V) eV to 7.50×10⁻³ s in (0.79−E_V) eV.