Abstract
The degradation behaviour of AlGaAs high power laser bars has been investigated using micro-electroluminescence (μ-EL) spectroscopy, electroluminescence microscopy (ELM) and micro-photocurrent (μ-PC) spectroscopy. The emitters in each bar have been individually studied in detail. A significant blue shift of the EL spectra was observed for certain emitters. Inspection of these blue-shifted emitters with ELM also showed the presence of extended defects. The EL spectral shifts correlate with the blue shift of the quantum well (QW) absorption edge observed by photocurrent (PC) spectroscopy and is caused by a mounting induced strain. This correlation suggests that μ-EL spectroscopy is a reliable and sensitive technology for the recognition of defective emitters and thus for the reliability assessment of high power laser bars.
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Xia, R., Andrianov, A., Bull, S. et al. Micro-electroluminescence spectroscopy investigation of mounting-induced strain and defects on high power GaAs/AlGaAs laser diodes. Optical and Quantum Electronics 35, 1099–1106 (2003). https://doi.org/10.1023/A:1026290008885
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DOI: https://doi.org/10.1023/A:1026290008885