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The effect of He or Ar/O2 plasma treatment on Si surface prior to chemical vapor deposition of SiO2

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Abstract

The effect of O2 plasma pretreatment on the SiO2/Si interface property was studied using direct plasma varying the plasma power, He or Ar/O2 ratio and the pretreatment time. The decrease of the pretreatment plasma power decreased the plasma damage and improved the interface property. The addition of He in O2 glow discharge improved the electrical and the interface properties and there was an optimum He/O2 ratio. The improvement of the interface property by Ar/O2-plasma pretreatment was better than that by He/O2, which is believed to be due to the lower oxidation rate of the Si surface. C–V analysis showed that the Pb center defect density was influenced by plasma pretreatment process parameters. To investigate the oxidation states near to and at the SiO2/Si interface, X-ray photoelectron spectroscopy depth analysis was used and the gas phase in the glow discharge was investigated using optical emission spectroscopy analysis at various experimental conditions.

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Authors and Affiliations

  1. Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Korea

    Hyo-Uk Kim, Chung Yi & Shi-Woo Rhee

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  1. Hyo-Uk Kim
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  2. Chung Yi
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  3. Shi-Woo Rhee
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Kim, HU., Yi, C. & Rhee, SW. The effect of He or Ar/O2 plasma treatment on Si surface prior to chemical vapor deposition of SiO2 . Journal of Materials Science: Materials in Electronics 15, 37–41 (2004). https://doi.org/10.1023/A:1026240904706

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