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Contact Resistance and Trap Density of Oligoaniline Field-Effect Transistor

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Abstract

The characteristics of metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated with 16-mer oligoaniline (16ANI) as semiconducting layer have been investigated. It is found that the contact resistance can be reduced three orders of magnitude by modifying the interface between metal electrode and organic material. Hence the field-effect mobility of modified 16ANI MOSFET can be increased by four times. The mobility can be further improved in the subsequent thermal treatment process. It is found that the field-effect mobility rather depends on trap density than on contact resistance.

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Authors and Affiliations

  1. Department of Chemical Engineering, Tatung University, 40 Chungshan North Road, 3rd Section, Taipei, 104, Taiwan, ROC

    Shou-Zheng Weng, Chin-Tsou Kuo & Shune-Long Wu

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  1. Shou-Zheng Weng
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  2. Chin-Tsou Kuo
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  3. Shune-Long Wu
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Weng, SZ., Kuo, CT. & Wu, SL. Contact Resistance and Trap Density of Oligoaniline Field-Effect Transistor. Journal of Polymer Research 10, 211–217 (2003). https://doi.org/10.1023/A:1026056329995

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