Abstract
Thin films containing lead stannates were prepared on single-crystal silicon substrates by annealing Sn/Pb/Si and Pb/Sn/Si structures produced by magnetron sputtering with the use of solid Sn targets and solid or liquid (self-sputtering) Pb targets. The structures were annealed in flowing oxygen for 10 min at temperatures in the range 520–1120 K. The phase composition of the films is found to strongly depend on the Pb deposition procedure, the sequence of layers in the as-grown heterostructure, and thermal oxidation conditions.
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Logacheva, V.A., Turenko, E.A., Khoviv, A.M. et al. Preparation of Thin Lead Stannate Layers on Single-Crystal Silicon. Inorganic Materials 39, 1079–1087 (2003). https://doi.org/10.1023/A:1026051511742
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DOI: https://doi.org/10.1023/A:1026051511742