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Fabrication and Dielectric Properties of Multilayer Ta2O5/Al2O3 Nanostructures

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Abstract

Multilayer Ta2O5/Al2O3 nanostructures are produced on Si(100) and Al by molecular layering, and their dielectric properties are investigated. The mechanisms of layer growth are discussed in terms of surface reactions.

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  1. St. Petersburg Technological Institute (Technical University), Moskovskii pr. 26, St. Petersburg, 198013, Russia

    Yu. K. Ezhovskii & A. I. Klusevich

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  1. Yu. K. Ezhovskii
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  2. A. I. Klusevich
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Ezhovskii, Y.K., Klusevich, A.I. Fabrication and Dielectric Properties of Multilayer Ta2O5/Al2O3 Nanostructures. Inorganic Materials 39, 1062–1066 (2003). https://doi.org/10.1023/A:1026043209924

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