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Effect of Microaccelerations on the Distribution of a Dopant in a Semiconductor Melt during Space Flight

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Abstract

The effect of residual microaccelerations on the distribution of a dopant in a semiconductor melt located in a heated closed cavity onboard an Earth-orbiting satellite is considered in the context of a model problem of thermal convection. The amplitude–frequency characteristics of the response of this distribution to the perturbing microaccelerations are obtained. It is demonstrated that the effect of low-frequency microaccelerations decreases when the frequency increases. A comparison is made of the macroscopic inhomogeneities of the dopant concentration due to the actual low-frequency (quasi-static) component of microaccelerations onboard different spacecraft: the orbital station Mir, the satellite Foton-11, a Space Shuttle orbiter, and the International Space Station. A substantial effect of the rotational motion of the spacecraft on the character of the time behavior of a macroscopic inhomogeneity is demonstrated.

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Authors and Affiliations

  1. Russian Academy of Sciences, Institute for Problems of Mechanics, pr. Vernadskogo 101, Moscow, 117526, Russia

    S. A. Nikitin & V. I. Polezhaev

  2. Russian Academy of Sciences, Keldysh Institute of Applied Mathematics, Miusskaya pl. 4, Moscow, 125047, Russia

    V. V. Sazonov

Authors
  1. S. A. Nikitin
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  2. V. I. Polezhaev
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  3. V. V. Sazonov
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Nikitin, S.A., Polezhaev, V.I. & Sazonov, V.V. Effect of Microaccelerations on the Distribution of a Dopant in a Semiconductor Melt during Space Flight. Cosmic Research 41, 502–516 (2003). https://doi.org/10.1023/A:1026006518527

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