Abstract
The possibilities of using emission photodetectors based on the p +–GeSi/p–Si heterojunctions in the spectral range 8–12 μm are considered. The dependences of spectral detectivity and noise-equivalent temperature difference on the temperature and detector parameters are analyzed.
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Voitsekhovskii, A.V., Kokhanenko, A.P. & Nesmelov, S.N. Threshold Characteristics of Infrared Photodetectors Based on GeSi/Si Heterojunctions. Russian Physics Journal 46, 356–358 (2003). https://doi.org/10.1023/A:1025767707972
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DOI: https://doi.org/10.1023/A:1025767707972