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Hybrid Model of Thermostabilization of the Drain Current in n‐Channel MOS Transistors

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Journal of Engineering Physics and Thermophysics Aims and scope

Abstract

A hybrid model, which makes it possible to calculate the influence of the drain voltage and the temperature on the mobility of electrons in the n‐channel of silicon MOS transistors with a high‐alloy substrate in the linear regime of their operation on the basis of a combination of analytical approximations and modeling of electron transfer by the Monte Carlo method, has been proposed.

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Authors and Affiliations

  1. Belarusian State University, Minsk, Belarus

    A. D. Andreev, V. M. Borzdov, A. A. Valiev, O. G. Zhevnyak & F. F. Komarov

Authors
  1. A. D. Andreev
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  2. V. M. Borzdov
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  3. A. A. Valiev
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  4. O. G. Zhevnyak
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  5. F. F. Komarov
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Andreev, A.D., Borzdov, V.M., Valiev, A.A. et al. Hybrid Model of Thermostabilization of the Drain Current in n‐Channel MOS Transistors. Journal of Engineering Physics and Thermophysics 76, 864–867 (2003). https://doi.org/10.1023/A:1025614608299

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  • DOI: https://doi.org/10.1023/A:1025614608299

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