Abstract
Experimental evidence is presented that high-temperature annealing of Zn-containing SiO2 films on Si gives rise to phase separation, accompanied by the formation of Zn-enriched bands. Appreciable amounts of zinc (sufficient to change the conductivity type of Si and to raise its resistivity) diffuse to only small depths (≤10 μm) and at relatively short diffusion times. Long-term high-temperature annealing reduces the Zn concentration in the film. This process can be inhibited by applying a protective SiO2 layer.
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Voronkova, G.M., Zuev, A.V., Zuev, V.V. et al. High-Temperature Zinc Doping of Silicon from Zinc-Containing SiO2 Films. Inorganic Materials 39, 904–910 (2003). https://doi.org/10.1023/A:1025540818101
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DOI: https://doi.org/10.1023/A:1025540818101