Abstract
The results of experimental investigations into the volt-ampere characteristics (VACs) of gallium arsenide light-emitting diode structures are presented. It is established that VACs of single- and multimesa structures are similar. It is demonstrated that the dependence of the current density on the voltage for the examined structures is well described in the context of the VAC theory of pin diodes.
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Karlova, G.F., Umbras, L.P. & Khanin, A.V. Mechanism of Charge Transfer in Gallium Arsenide Light-Emitting Structures. Russian Physics Journal 46, 254–256 (2003). https://doi.org/10.1023/A:1025429626336
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DOI: https://doi.org/10.1023/A:1025429626336