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Effect of the Nickel Impurity on the Rate of Surface Generation of Charge Carriers at the Si–SiO2 Interface

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Russian Physics Journal Aims and scope

Abstract

The effect of the nickel impurity on the generation characteristics of the Si–SiO2 interface is investigated by the method of isothermal capacitance relaxation. It is demonstrated that doping by the nickel impurity increases the rate of surface generation of charge carriers and the spread of this parameter from structure to structure. The effects observed are associated with the existence of defect-impurity complexes formed in doped structures as a result of interaction of impurity clusters (precipitates) with native defects in the transition layer at the Si–SiO2 interface.

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Authors and Affiliations

  1. Andizhan State University, Russia

    S. Z. Zainabidinov & Sh. Kh. Iulchiev

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  1. S. Z. Zainabidinov
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  2. Sh. Kh. Iulchiev
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Zainabidinov, S.Z., Iulchiev, S.K. Effect of the Nickel Impurity on the Rate of Surface Generation of Charge Carriers at the Si–SiO2 Interface. Russian Physics Journal 46, 161–164 (2003). https://doi.org/10.1023/A:1024693929215

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  • DOI: https://doi.org/10.1023/A:1024693929215

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