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Carrier Mobility in GaSb–V2Ga5and GaSb–GaV3Sb5 Eutectic Alloys

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Inorganic Materials Aims and scope

Abstract

Experimental evidence is presented that semiconductor–metal eutectics with a low content of the metallic phase (4 vol %) are similar in electronic structure to inhomogeneous semiconductors. The microstructure of undoped and Te-doped GaSb–V2Ga5 and GaSb–GaV3Sb5 eutectic alloys is examined, and the Hall mobility of carriers in these alloys is determined. The anomalous temperature variation of Hall mobility in GaSb–V2Ga5 (μ ∼ T  2) and GaSb–GaV3Sb5 (μ ∼ T  5) is interpreted in terms of infinite clusters ofn-type metallic inclusions embedded in a p-type semiconductor matrix and interconnected through overlapping inhomogeneous interfaces. It seems likely that the difference in conductivity type between the semiconductor matrix and the infinite clusters gives rise to a random large-scale potential relief. Te compensation of GaSb in the eutectic alloys causes the Hall mobility to vary more rapidly with temperature, μ ∼T   3 to T 10 , which is interpreted as due to an increase in the amplitude of the random large-scale potential relief, the formation of infinite clusters, and partial compensation of unintentional acceptor doping in the semiconductor matrix.

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  1. Academy of Sciences of Azerbaijan, Institute of Physics, pr. Dzhavida 33, Baku, 370143, Azerbaijan

    G. I. Isakov

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Isakov, G.I. Carrier Mobility in GaSb–V2Ga5and GaSb–GaV3Sb5 Eutectic Alloys. Inorganic Materials 39, 568–575 (2003). https://doi.org/10.1023/A:1024088817440

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