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Magnetoresistance of the Two-Dimensional Electron Gas in GaN Quantum Wells in a Parallel Magnetic Field

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Abstract

We present results for the resistivity of the two-dimensional spin-polarized electron gas as realized in GaN quantum wells at zero temperatures. A parallel magnetic field is used to create a spin-polarized electron gas. We discuss the density dependence of the magnetoresistance for impurity scattering and interface-roughness scattering. Finite width effects of the electron gas on the magnetoresistance are described.

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Authors and Affiliations

  1. Centre d'Elaboration de Matériaux et d'Etudes Structurales, 29 Rue Jeanne Marvig, 31055, Toulouse, France

    A. Gold

  2. Institute of Solid State Physics, 142432 Chernogolovka, Moscow District, Russia

    V. T. Dolgopolov

Authors
  1. A. Gold
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  2. V. T. Dolgopolov
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Gold, A., Dolgopolov, V.T. Magnetoresistance of the Two-Dimensional Electron Gas in GaN Quantum Wells in a Parallel Magnetic Field. Journal of Superconductivity 16, 307–308 (2003). https://doi.org/10.1023/A:1023657201872

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  • DOI: https://doi.org/10.1023/A:1023657201872

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