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Anomalous Hall Effect in Sn1−x−y Mn x Eu y Te and Sn1−x−y Mn x Er y Te Mixed Crystals

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Abstract

The Anomalous Hall Effect (AHE) was investigated in IV–VI ferromagnetic semimagnetic semiconductors of Sn1−x Mn x Te codoped with either Eu or Er. The analysis of experimental data is as follows. Hall resistivity and magnetization showed that AHE coefficient R s depends on temperature and its value decreases with thetemperature increase. We observe that above ferromagnet–paramagnet transition temperature R s changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of R s , particularly change of the sign.

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Authors and Affiliations

  1. Institute of Physics, Polish Academy of Sciences, Warszawa, Poland

    K. Racka, I. Kuryliszyn, M. Arciszewska & W. Dobrowolski

  2. Laboratoire National des Champs Magnetiques Pulses, Toulouse, France

    J.-M. Broto, O. Portugall, H. Rakoto & B. Raquet

  3. Chernivtsy Department of the Institute of Materials Science Problems, Ukraine

    V. Dugaev, E. I. Slynko & V. E. Slynko

Authors
  1. K. Racka
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  2. I. Kuryliszyn
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  3. M. Arciszewska
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  4. W. Dobrowolski
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  5. J.-M. Broto
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  6. O. Portugall
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  7. H. Rakoto
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  8. B. Raquet
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  9. V. Dugaev
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  10. E. I. Slynko
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  11. V. E. Slynko
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Racka, K., Kuryliszyn, I., Arciszewska, M. et al. Anomalous Hall Effect in Sn1−x−y Mn x Eu y Te and Sn1−x−y Mn x Er y Te Mixed Crystals. Journal of Superconductivity 16, 289–291 (2003). https://doi.org/10.1023/A:1023648900055

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  • DOI: https://doi.org/10.1023/A:1023648900055

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