Abstract
We study the planar Hall effect in high quality thin ferromagnetic films of MnAs grown on GaAs(001) exhibiting hysteresis due to the hindered rotation of the magnetic moment in the plane. The saturation magnetic field H s, which is necessary to align the magnetization along the hard axis, depends sensitively on the epitaxial orientation of the film. By using out-of-plane magnetic fields directions, we show that H s is strongest along the direction of the c-axis of the MnAs crystal, thus demonstrating the importance of the crystal field anisotropy for the planar Hall effect.
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Friedland, KJ., Kästner, M. & Däweritz, L. Epitaxial Orientation and Planar Hall Effect for MnAs Films Grown on GaAs(001). Journal of Superconductivity 16, 261–265 (2003). https://doi.org/10.1023/A:1023636630097
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DOI: https://doi.org/10.1023/A:1023636630097