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Observation of e2/h Conductance Steps in a Side-Gate Point Contact on In0.75Ga0.25As/In0.75Al0.25As Heterostructure

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Abstract

In 1996, it was suggested by K. J. Thomas et al. (Phys. Rev. Lett. 77, 135 (1996)) that 0.7(2e2/h) conductance structure in Quasi-1DEG (Q1DEG) at GaAs/AlGaAs heterostructure might be related to spin polarization at zero magnetic field. We have recently studied spontaneous spin-splitting in the 2DEGs formed at normal metamorphic In0.75Ga0.25As/In0.75Al0.25As heterojunctions grown on GaAs substrates and obtained the value of ≲10 meV as the zero-field splitting at Fermi level (Y. Sato et al., J. Appl. Phys. 89, 8017 (2001)). In this work, we attempted to observe spin-related phenomena in this heterojunction Q1DEGs at zero magnetic field. We observed e2/h conductance steps in low electron concentration side-gate point contact.

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Authors and Affiliations

  1. Center for Nano Materials and Technology, JAIST, 1-1 Asahidai, Tatsunokuchi, Ishikawa, 923-1292, Japan

    T. Kita, Y. Sato & S. Yamada

  2. CREST Japan Science and Technology, Kawaguchi, Saitama, 332-0012, Japan

    S. Gozu

Authors
  1. T. Kita
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  2. S. Gozu
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  3. Y. Sato
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  4. S. Yamada
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Kita, T., Gozu, S., Sato, Y. et al. Observation of e2/h Conductance Steps in a Side-Gate Point Contact on In0.75Ga0.25As/In0.75Al0.25As Heterostructure. Journal of Superconductivity 16, 327–329 (2003). https://doi.org/10.1023/A:1023617520528

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  • DOI: https://doi.org/10.1023/A:1023617520528

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