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Strain relaxation of InAs epilayer on GaAs under In-rich conditions

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Journal of Materials Science Letters

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Authors and Affiliations

  1. Chinese Academy of Sciences, Institute of Physics, Beijing, 100080, People's Republic of China

    L. C. Cai, H. Chen, C. L. Bao, Q. Huang & J. M. Zhou

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  1. L. C. Cai
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  2. H. Chen
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  3. C. L. Bao
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  4. Q. Huang
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  5. J. M. Zhou
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Cai, L.C., Chen, H., Bao, C.L. et al. Strain relaxation of InAs epilayer on GaAs under In-rich conditions. Journal of Materials Science Letters 22, 599–601 (2003). https://doi.org/10.1023/A:1023350529729

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