Abstract
Semiconductive properties of a titanium anodic oxide film are found to depend on the film formation rate and potential. Both donor density and flat-band potential obey a power dependence on the formation potential with the coefficients depending linearly on the logarithm of the growth rate. The donor density increases with the temperature following an Arrhenius-like equation.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Zwiling, V., Aucouturier, M., and Darque-Ceretti, E., Electrochim. Acta, 1999, vol. 45, p. 921.
Marsh, J. and Gorse, D., Electrochim. Acta, 1998, vol. 43, p. 659.
Piazza, S., Lo Biundo, G., Romano, M.C., et al., Corros. Sci., 1998, vol. 40, p. 1087.
Ohtsuka, T. and Otsuki, T., Corros. Sci., 1998, vol. 40, p. 951.
Chen, C.M., Beck, F.H., and Fontana, M.G., Corrosion (Houston), 1970, vol. 26, p. 1335.
Pankuch, M., Bell, R., and Melendres, C.A., Electrochim. Acta, 1993, vol. 38, p. 2777.
Blackwood, D.J., Electrochim. Acta, 2000, vol. 46, p. 563.
Biaggio, S.R., Rocha-Filho, R.C., Vilche, J.R., et al., Electrochim. Acta, 1997, vol. 42, p. 1751.
Di Quarto, F., Russo, G., and Sunseri, C., Electrochim. Acta, 1981, vol. 26, p. 1177.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Ibriş, N. Dependence of Semiconductive Properties of Titanium Oxide Film on the Growth Rate and Formation Potential. Russian Journal of Electrochemistry 39, 430–432 (2003). https://doi.org/10.1023/A:1023330610633
Issue Date:
DOI: https://doi.org/10.1023/A:1023330610633