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Introduction of Radiation-Induced Defects into GaAs at High Temperatures

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Russian Physics Journal Aims and scope

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REFERENCES

  1. D. Stievenard and J. C. Bourgoin, J. Appl. Phys., 59, No. 3, 743 (1986).

    Google Scholar 

  2. V. N Brudnyi and V. V Peshev, Phys. Stat. Sol. (a), No. 105, 57 (1988).

  3. D. Pons and J. C. Bourgoin, J. Phys. C.: Solid State Phys., 18, 3839 (1985).

    Google Scholar 

  4. V. A. Ivanyukovich, V. I. Karas', and V. M. Lomako, Fiz. Tekh. Poluprovod., 24, 1427 (1990).

    Google Scholar 

  5. M. W. Thompson, Defects and Radiation Damage in Metals, Cambridge University Press (1969).

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Authors and Affiliations

  1. Tomsk Polytechnic University, Russia

    V. V. Peshev

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  1. V. V. Peshev
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Peshev, V.V. Introduction of Radiation-Induced Defects into GaAs at High Temperatures. Russian Physics Journal 45, 1132–1133 (2002). https://doi.org/10.1023/A:1023320313050

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  • DOI: https://doi.org/10.1023/A:1023320313050

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