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The Variable Thermal Sensitivity of Strontium-Lead Titanate Semiconducting Ceramics

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Abstract

Strontium-lead titanate semiconducting ceramics with low room temperature resistivity (ρRT) and variable NTCR-PTCR composite effects were fabricated at different sintering conditions. Both ρRT and the NTCR effect decreased at the higher heating rate or doping excess of PbO. After the heat-treatment at 950°C, the transformations from PTCR to NTCR-PTCR characteristics were observed in excess PbO-doped samples. According to the results, it is assumed that the lead vacancies (VPb″) in the grain boundary layers degenerate the conductivity of strontium-lead titanate semiconducting ceramics and the NTCR behaviors below the Curie temperature are ascribed to the electron detrapping of acceptor defects with increasing temperature.

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Authors and Affiliations

  1. State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, People's Republic of China

    Jingchang Zhao, Longtu Li, Jianquan Qi & Zhilun Gui

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  1. Jingchang Zhao
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  2. Longtu Li
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  3. Jianquan Qi
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  4. Zhilun Gui
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Correspondence to Jingchang Zhao.

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Zhao, J., Li, L., Qi, J. et al. The Variable Thermal Sensitivity of Strontium-Lead Titanate Semiconducting Ceramics. Journal of Electroceramics 9, 173–177 (2002). https://doi.org/10.1023/A:1023261124834

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