References
S. F. Scott and C. A. Paz De Araujo, Science 246 (1989) 1400.
J. F. Scott, Ferroelectrics Review 1 (1998) 85.
E. Tokumitsu, D. Takahashi and H. Ishiwara, Jpn. J. Appl. Phys. 39 (2000) 5456.
T. Kanashima and M. Okuyama, ibid. 38 (1999) 2044.
Y. Matsui, M. Okuyama, M. Noda and H. Hamakawa, Appl. Phys. A 28 (1982) 161.
J. W. Lee, B. G. Yu, J. S. Lyu, J. H. Lee and J. W. Kim, J. Korean Phys. Soc. 35 (1999) 509.
Y. T. Kim and D. S. Shin, Appl. Phys. Lett. 71 (1997) 3507.
J. Senzaki, K. Kurihara, N. Nomura and O. Mitsunaga, Jpn. J. Appl. Phys. 37 (1998) 5150.
J. D. Park, T. S. Oh, J. H. Lee and J. Y. Park, Thin Solid Films 39 (2000) 183.
T. Kanashima and M. Okuyama, Jpn. J. Appl. Phys. 38 (1999) 2044.
J. Senzaki, K. Kurihara, N. Nomura and O. Mitsunaga, ibid. 37 (1998) 5150.
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Kim, J.W., Park, J.D., Choi, J.H. et al. Electrical properties of the Pt/Sr0.85Bi2.4Ta2O9/TiO2/Si structure with variation of the Sr0.85Bi2.4Ta2O9 film thickness. Journal of Materials Science Letters 22, 535–537 (2003). https://doi.org/10.1023/A:1022994521453
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DOI: https://doi.org/10.1023/A:1022994521453