Abstract
The differences in the RBS angular yields measured for 100 keV hydrogen atoms H0 and protons H+ backscattered from Si crystal are reported and analysed. It was shown that H0 atom beam is better channelled in the pure crystal and is much more sensitive to the crystal surface coverage, particularly, Au layer than the H+ ion beam. The deep crystal regions seem to strengthen this differences.
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Moneta, M., Czerbniak, J. Differences in Channelling of H0 and H+ in Si Single Crystal. Czechoslovak Journal of Physics 53, 191–197 (2003). https://doi.org/10.1023/A:1022968713086
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DOI: https://doi.org/10.1023/A:1022968713086