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Bilaterally Sensitive Photodiode Structures in the System Gallium Arsenide–Cadmium Sulfide

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Journal of Engineering Physics and Thermophysics Aims and scope

Abstract

It has been shown experimentally that in a double‐barrier photodiode structure with a common modulated base region, the spectral characteristics for the cases of cutoff p‐n‐hetero‐ (pGaAs–nCdS) and metal‐semiconductor (m–pGaAs) junctions can have the identical form where the mechanism of formation is determined by the processes occurring in the regions of space charge which are located predominantly in the common (pGaAs) region.

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Authors and Affiliations

  1. Tashkent State Technical University, Tashkent, Republic of Uzbekistan

    K. Vakhobov, A. V. Karimov, A. G. Gaibov & D. M. Edgorova

  2. Department of Thermal Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Republic of Uzbekistan

    Kh. T. Igamberdiev

Authors
  1. K. Vakhobov
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  2. A. V. Karimov
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  3. A. G. Gaibov
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  4. D. M. Edgorova
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  5. Kh. T. Igamberdiev
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Vakhobov, K., Karimov, A.V., Gaibov, A.G. et al. Bilaterally Sensitive Photodiode Structures in the System Gallium Arsenide–Cadmium Sulfide. Journal of Engineering Physics and Thermophysics 76, 197–199 (2003). https://doi.org/10.1023/A:1022956400985

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  • DOI: https://doi.org/10.1023/A:1022956400985

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