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Charge Properties of a Condenser System Based on the Two‐Layer Dielectric SiO2–Ta2O5

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Abstract

A variant of a combined dielectric for the condensers of very large‐scale integrated circuits (VLSICs) has been proposed. Its electrophysical and mechanical properties have been analyzed. The influence of the thickness of each of the dielectrics on the effective built‐in charge, the permittivity, and the threshold voltage has been considered. Special emphasis has been placed on the residual mechanical stresses in a three‐layer dielectric system, namely, the influence of the thickness of a Ta2O5 film on the radius of curvature of the Si–SiO2–Ta2O5 system has been analyzed and the dependence of the change in the effective built‐in charge in the Ta2O5 film on the radius of curvature of the plate has been determined.

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Authors and Affiliations

  1. “Integral” Scientific‐Production Association, Minsk, Belarus

    V. A. Pilipenko, V. N. Ponomar' & T. V. Petlitskaya

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  1. V. A. Pilipenko
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  2. V. N. Ponomar'
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  3. T. V. Petlitskaya
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Pilipenko, V.A., Ponomar', V.N. & Petlitskaya, T.V. Charge Properties of a Condenser System Based on the Two‐Layer Dielectric SiO2–Ta2O5. Journal of Engineering Physics and Thermophysics 76, 193–196 (2003). https://doi.org/10.1023/A:1022904316914

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  • DOI: https://doi.org/10.1023/A:1022904316914

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