Abstract
We report electrical transport properties of intentionally and unintentionally doped wurtzite GaN epilayers within the temperature range of 3K up to 340 K. Specifically, temperature dependence of the carrier concentration, mobility and resistivity are investigated. Obtained data could only be explained on the basis of two-band model, namely, high mobility conduction band and low mobility impurity band. The threshold doping concentration for the dominance of the conduction band electrons is estimated to be about 1018 cm−3.
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Erol, M. Temperature dependence of transport characteristics of wurtzite GaN epilayers. Czechoslovak Journal of Physics 50, 665–670 (2000). https://doi.org/10.1023/A:1022866620091
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DOI: https://doi.org/10.1023/A:1022866620091