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Self-Consistent Calculation of the Self-Trapping Barrier for a Hole in the CuO2 Plane

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Abstract

We study the behavior of an extra hole added to the ground state of the antiferromagnetically ordered CuO2 plane. Both the Cu--O hybridization and the O--O transfer are taken into account. As has been shown previously (V. Hizhnyakov and E. Sigmund, Physica C 156, 655 [1988]), the energetically most favorable situation is given when a localized state is formed in which the antiferromagnetic order is locally destroyed and a small ferromagnetic cluster is built up. We show that due to the increase of the magnetic energy induced by the spin–flip process (E s∼0.15 eV), the localized and the metastable free-hole states are separated by a barrier of energy (E b∼0.05 eV), which can reveal itself in various kinetic phenomena.

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Shelkan, A., Hizhnyakov, V. & Sigmund, E. Self-Consistent Calculation of the Self-Trapping Barrier for a Hole in the CuO2 Plane. Journal of Superconductivity 11, 677–682 (1998). https://doi.org/10.1023/A:1022672502655

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  • DOI: https://doi.org/10.1023/A:1022672502655

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