Abstract
The concept and structure of the NANODEV simulation software are described. NANODEV deals with nanoelectronic devices that exploit single-electron tunneling, resonant tunneling, or quantum interference. It can use both simplified and sophisticated models and enables one to evaluate a wide variety of devices and configurations. The capabilities of NANODEV are illustrated by examples.
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REFERENCES
Chen, R.H. and Likharev, K.K., Multiple-Junction Single-Electron Transistors for Digital Applications, Appl. Phys. Lett., 1998, vol. 72, pp. 61–63.
Wasshuber, C. and Kosina, H., A Single-Electron Device and Circuit Simulator, Superlattices Microstruct., 1997, vol. 21, no. 1, pp. 37–42.
Klimeck, G., Lake, R., Bowen, R.C., Frensley, W.R., and Moise, T.S., Quantum Device Simulation with a Generalized Tunneling Formula, Appl. Phys. Lett., 1995, vol. 67, pp. 2539–2541.
Lake, R., Klimeck, G., Bowen, R.C., and Jovanovic, D., Single and Multiband Modeling of Quantum Electron Transport through Layered Semiconductor Devices, J. Appl. Phys., 1997, vol. 81, pp. 7845–7869.
Abramov, I.I. and Kharitonov, V.V., Analysis of Multidimensional-Simulation Software for Silicon VLSI and ULSI Components, Elektron. Tekh., Ser. 3: Mikroelektron., 1992, issue 1, pp. 28–32.
Sun, J.P., Haddad, G.I., Mazumder, P., and Schulman, J.N., Resonant Tunneling Diodes: Models and Properties, Proc. IEEE, 1998, vol. 86, pp. 641–661.
Abramov, I.I. and Novik, E.G., Chislennoe modelirovanie metallicheskikh odnoelektronnykh tranzistorov (Numerical Simulation of Metal-Compound Single-Electron Transistors), Minsk: Bestprint, 2000.
Abramov, I.I., Goncharenko, I.A., Novik, E.G., and Sheremet, I.V., Simulation Software System for Single-Electron and Resonant-Tunneling Nanoelectronic Devices, Materialy 6-oi Mezhdunarodnoi Krymskoi konferentsii "SVCh-tekhnika i telekommunikatsionnye tekhnologii", KryMiKo'96 (Materials of the 6th Int. Crimean Conf. on Microwave and Telecommunication Technologies, CriMiCo'96), Sebastopol, 1996, pp. 294–298.
Abramov, I.I., Modelirovanie fizicheskikh protsessov v elementakh kremnievykh integral'nykh mikroskhem (Modeling Physical Processes in Silicon-IC Components), Minsk: BGU, 1999.
Abramov, I.I. and Novik, E.G., Classification of Single-Electron Devices, Fiz. Tekh. Poluprovodn. (St. Petersburg), 1999, vol. 33, issue 11, pp. 1388–1394.
Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures, Grabert, H. and Devoret, M.H., Eds., NATO ASI Ser., Ser. B, vol. 294, New York: Plenum, 1992.
Abramov, I.I., Goncharenko, I.A., and Novik, E.G., On the Operating Temperature of Single-Electron Transistors, Pis'ma Zh. Tekh. Fiz., 1998, vol. 24, issue 8, pp. 16–19.
Abramov, I.I. and Novik, E.G., A Two-Dimensional Numerical Model of the Single-Electron Transistor, Mikroelektronika, 2000, vol. 29, no. 3, pp. 197–201.
Abramov, I.I. and Novik, E.G., Modeling the Single-Electron Transistor by Numerical Solution of Poisson's Equation, Pis'ma Zh. Tekh. Fiz., 2000, vol. 26, issue 16, pp. 63–67.
Abramov, I.I. and Novik, E.G., Characteristics of Single-Electron Transistors Based on Different Metal Compounds, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2000, vol. 34, issue 8, pp. 1014–1019.
Abramov, I.I., Goncharenko, I.A., and Novik, E.G., Computer Simulation of Single-Electron Transistors, Izv. Vyssh. Uchebn. Zaved., Elektron., 2000, no. 2, pp. 87–94.
Abramov, I.I., Novik, E.G., and Ignatenko, S.A., Single-Electron Devices Based on Three Cascaded Tunnel Junctions: The Calculation of Current-Voltage Characteristics, Materialy dokladov Mezhdunarodnoi nauchnotekhnicheskoi konferentsii “Novye tekhnologii izgotovleniya mnogokristal'nykh modulei” (Proc. Int. Conf. on New Manufacture Technologies for Multichip Modules), Minsk, 2000, pp. 112–114.
Abramov, I.I. and Novik, E.G., Background-Charge Approximations for Single-Electron-Transistor Modeling, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2001, vol. 35, issue 4, pp. 489–491.
Abramov, I.I., Berashevich, Yu.A., Sheremet, I.V., and Yakubovskii, I.A., Simulation Software System for Resonant-Tunneling Structures, Izv. Vyssh. Uchebn. Zaved., Radioelektron., 1999, vol. 42, no. 2, pp. 46–50.
Abramov, I.I., Goncharenko, I.A., Danilyuk, A.L., and Korolev, A.V., Simulation of Resonant-Tunneling Structures with the RTS-NANODEV Software System, Materialy 9-oi Mezhdunarodnoi Krymskoi mikrovolnovoi konferentsii “SVCh-tekhnika i telekommunikatsionnye tekhnologii”, KryMiKo'99 (Materials of the 9th Int. Crimean Conf. on Microwave and Telecommunication Technologies, CriMiCo'99), Sebastopol, 1999, pp. 296–299.
Goncharenko, I.A., Method and Software for the Calculation of the Transmission Coefficient for a Double-Barrier Resonant-Tunneling Structure, Vesn. Suvyazi, 1999, no. 1, pp. 138–140.
Abramov, I.I. and Goncharenko, I.A., Comparative Study of a Numerical and an Analytical Model of Resonant-Tunneling Structures, Izv. Belarus. Inzh. Akad., 1999, nos. 1(7)-2, pp. 116–118.
Abramov, I.I. and Goncharenko, I.A., Methods for the Approximation of Exterior-Boundary Conditions in the Modeling of Resonant-Tunneling Structures, Izv. Belarus. Inzh. Akad., 2000, nos. 1(9)-2, pp. 88–90.
Abramov, I.I. and Goncharenko, I.A., Combined 1D Model of the Resonant-Tunneling Diode, Materialy 11-oi Mezhdunarodnoi konferentsii “SVCh-tekhnika i telekommunikatsionnye tekhnologii”, KryMiKo'2001 (Materials of the 11th Int. Conf. on Microwave and Telecommunication Technologies, CriMiCo'2001), Sebastopol, 2001, pp. 443–444.
Abramov, I.I., Danilyuk, A.L., and Korolev, A.V., Nonlinear Electrical Model of the Resonant-Tunneling Diode, Izv. Vyssh. Uchebn. Zaved., Radioelektron., 2000, vol. 43, no. 3, pp. 59–63.
Abramov, I.I., Danilyuk, A.L., and Korolev, A.V., Steady-State and Transient Characteristics of the Resonant-Tunneling Diode Represented in Terms of a Nonlinear Electrical Model, Vestsi NAN Belarusi, Ser. Fiz.-Tekh. Navuk, 2000, no. 2, pp. 75–79.
Abramov, I.I., Danilyuk, A.L., and Korolev, A.V., Universal Electrical Model of Double-Barrier Structures, Vestsi NAN Belarusi, Ser. Fiz.-Tekh. Navuk, 2001, no. 1, pp. 78–81.
Abramov, I.I. and Korolev, A.V., Theoretical Study of Active Structures Containing Resonant-Tunneling Diodes, Zh. Tekh. Fiz., 2001, vol. 71, issue 9, pp. 128–133.
Abramov, I.I. and Rogachev, A.I., Frequency Characteristics of T-interference Transistors Differing in Semiconductor Material, Materialy 10-oi Mezhdunarodnoi Krymskoi mikrovolnovoi konferentsii “SVCh-tekhnika i telekommunikatsionnye tekhnologii”, KryMiKo'2000 (Materials of the 10th Int. Crimean Conf. on Microwave and Telecommunication Technologies, CriMiCo'2000), Sebastopol, 2000, pp. 421–422.
Abramov, I.I. and Rogachev, A.I., Electrical Characteristics of Single-Gate Quantum-Interference Transistors Differing in Semiconductor Material, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2001, vol. 35, issue 11, pp. 1365–1369.
Abramov, I.I. and Rogachev, A.I., Wigner-Function Model of a Ballistic-Transport T-interference Transistor, Izv. Belarus. Inzh. Akad., 2001, no. 1(11)/3, pp. 74–76.
Miller, T.G. and Reifenberger, R., Three-Tunnel-Capacitor Model for Single-Electron Tunneling in Layered Thin Films, Phys. Rev. B, 1994, vol. 50, pp. 3342–3349.
Abramov, I.I., Berashevich, Yu.A., and Danilyuk, A.L., Electric-Potential Characteristics of Quantum-Interference Transistors Differing in Semiconductor Material, Zh. Tekh. Fiz., 1999, vol. 69, issue 11, pp. 130–131.
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Abramov, I.I., Goncharenko, I.A., Ignatenko, S.A. et al. NANODEV: A Nanoelectronic-Device Simulation Software System. Russian Microelectronics 32, 97–104 (2003). https://doi.org/10.1023/A:1022604118886
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DOI: https://doi.org/10.1023/A:1022604118886