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Low Temperature Mobility of Steps on the 4He Crystal Facets: Effects of 3He Impurities

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Abstract

At low temperatures, the dissipation due to scattering of thermal phonons by elementary steps on the facets of helium crystals is very small; 3 He impurities may dominate in dissipative processes even at low concentrations. We calculate the step mobility determined by collisions of the step with impurities in bulk liquid and impurities absorbed on the liquid-solid interface, in different temperature and concentration regions.

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  1. P.L.Kapitza Institute for Physical Problems, ul Kosygina 2, 117334, Moscow, Russia

    Alexander Ya. Parshin

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  1. Alexander Ya. Parshin
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Parshin, A.Y. Low Temperature Mobility of Steps on the 4He Crystal Facets: Effects of 3He Impurities. Journal of Low Temperature Physics 110, 133–140 (1998). https://doi.org/10.1023/A:1022579120845

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  • DOI: https://doi.org/10.1023/A:1022579120845

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