Abstract
GaAs (100)-(1X1) surface grown by molecular-beam epitaxy was studied by low energy electron diffraction (LEED). Intensities of diffraction spots were measured in the energy range of (40-300) eV and analysed using dynamical tensor LEED package. Relaxation of surface layers decreased the Pendry's R-factor to 0.48. Analysis of the LEED intensity-voltage curves for the normal electron incidence shows that the investigated surface structure is more complicated than a simply relaxed ideal surface.
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Romanyuk, O., Jiříček, P., Cukr, M. et al. GaAs (100)-(1X1) Structure Analysis from LEED Intensities. Czechoslovak Journal of Physics 53, 49–54 (2003). https://doi.org/10.1023/A:1022351520159
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DOI: https://doi.org/10.1023/A:1022351520159