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Investigation of the Electronic Structure of Cd4GeSe6 by Photoelectrochemical and Photoluminescence Methods

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Abstract

The Cd4GeSe6 crystals were grown by the chemical vapor transport method. The crystals were characterized by photoelectrochemical and photoluminescence methods and were found to be n-type, with a 1.759 eV direct band gap.

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Authors and Affiliations

  1. Uzhgorod State University, ul. Gorki 46, Uzhgorod, 88000, Ukraine

    S. Kovách & S. Motrya

  2. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, H-1525, Budapest, P.O. Box 49, Hungary

    Á. Nemcsics & Z. Lábadi

  3. Lancaster University, Lancaster, LA1 4YB, UK

    Z. Lábadi

Authors
  1. S. Kovách
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  2. Á. Nemcsics
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  3. Z. Lábadi
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  4. S. Motrya
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Kovách, S., Nemcsics, Á., Lábadi, Z. et al. Investigation of the Electronic Structure of Cd4GeSe6 by Photoelectrochemical and Photoluminescence Methods. Inorganic Materials 39, 108–112 (2003). https://doi.org/10.1023/A:1022182210088

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  • DOI: https://doi.org/10.1023/A:1022182210088

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