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Determination of Plasma Frequency and the Pulse Relaxation Time in Doped Semiconductors by FIR Surface Waves

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Abstract

The Surface Electromagnetic waves method was applied for determination of plasma frequency and pulse relaxation time in doped A3B5 semiconductors. The influence of plasmon phonon interaction, nonparabolity of the conduction band, electron scattering peculiarities, presence of disturbed layers are under consideration.

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References

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Authors and Affiliations

  1. Institute of Physics, Gostauto 12, 2029, Vilnius, Lithuania. Fax:

    V. Vaicikauskas, R. Antanavicius & R. Januskevicius

Authors
  1. V. Vaicikauskas
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  2. R. Antanavicius
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  3. R. Januskevicius
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Vaicikauskas, V., Antanavicius, R. & Januskevicius, R. Determination of Plasma Frequency and the Pulse Relaxation Time in Doped Semiconductors by FIR Surface Waves. International Journal of Infrared and Millimeter Waves 20, 439–445 (1999). https://doi.org/10.1023/A:1021765415328

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  • DOI: https://doi.org/10.1023/A:1021765415328

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