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Technology of Production of Integrated Devices for Millimeter Wave Electronics Based on High-Temperature Superconducting Films

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Abstract

In the work, the results on the analysis of phase transitions in amorphous films Y-Ba-Cu-O under their annealing are presented for the purpose to obtain high-temperature superconducting film samples intended for microwave applications. The analysis and choice of material for substrates have been carried out with the purpose to create integrated microwave circuits, using the high-temperature superconducting films. The method of producing the epitaxial Y-Ba-Cu-O films for microwave electronics has been justified. With the purpose of creation of the hybrid integrated circuits with application of high-temperature superconductor films, the data on producing the ohmic contacts with low transitional resistance in a system metal - high temperature superconducting film are presented. The analysis of critical parameters and microwave properties of YBa2Cu3O7 films under their annealing in vacuum has been carried out. The justification of temperature regimes of contact photolithography concerning the YBa2Cu3O7−δ films is given. The influence of oxygen implantation on structural properties and critical parameters of YBa2Cu3O7−δ is demonstrated.

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  1. The State Research Center, Fonon, 37, Peremogy Ave., KPI-3240, Kyiv, Ukraine

    O. D. Poustylnik & V. A. Komashko

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  1. O. D. Poustylnik
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Poustylnik, O.D., Komashko, V.A. Technology of Production of Integrated Devices for Millimeter Wave Electronics Based on High-Temperature Superconducting Films. International Journal of Infrared and Millimeter Waves 20, 411–437 (1999). https://doi.org/10.1023/A:1021713431258

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