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Defect chemistry and semiconducting properties of calcium titanate

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Abstract

The present paper considers the effect of oxygen partial pressure on the presence of point defects in calcium titanate (CaTiO3) at elevated temperatures at which a gas/solid equilibrium is reached. Defect models of undoped (CaTiO3) are considered within several regimes of oxygen partial pressures involving (i) extremely reducing conditions, (ii) reducing conditions, and (iii) oxidizing conditions, which are described by different charge-neutrality conditions. The mechanism of donor incorporation is considered in terms of both ionic and electronic charge compensation. It is shown that electronic and ionic charge compensations prevail at low and high p(O2), respectively.

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Authors and Affiliations

  1. School of Materials Science and Engineering, The University of New South Wales, Sydney, NSW 2052, Australia

    M. F. Zhou, T. Bak, J. Nowotny, M. Rekas & C. C. Sorrell

  2. Materials Division, Australian Nuclear Science and Technology Organisation, Lucas Heights, Menai, NSW, 2234, Australia

    E. R. Vance

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  1. M. F. Zhou
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  3. J. Nowotny
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  5. C. C. Sorrell
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  6. E. R. Vance
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Zhou, M.F., Bak, T., Nowotny, J. et al. Defect chemistry and semiconducting properties of calcium titanate. Journal of Materials Science: Materials in Electronics 13, 697–704 (2002). https://doi.org/10.1023/A:1021552602704

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