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Investigation of CdSe x Te1−x : Te composite thin films

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Abstract

Thin films of the composite CdSe x Te1−x : Te have been prepared by the thermal coevaporation technique of ingot double-source CdSe powder and Te at 300 K. The films were analyzed by energy dispersion analysis by X-rays (EDAX) and X-ray diffraction techniques and found to have a polycrystalline structure of CdSe x Te1−x of hexagonal phase and Te of hexagonal phase for CdSe x Te1−x : Te of x ranging from 0.65 to 0.76. There exists SiO2 of tetragonal phase in as-deposited CdSe : Te films but it is not present in films annealed at a temperature of 413 K. The crystallite size for the composite films was determined and showed the same values for different x values. Optical properties of deposited films were calculated through their optical transmission and reflection spectra. It was observed that the composite films of CdSe x Te1−x : Te have two direct transition energies instead of one direct optical transition typical of CdSe films.

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Authors and Affiliations

  1. National Research Center, Solid State Physics Laboratory, Tahrir St., Dokki, Cairo, Egypt

    I. K. El Zawawi

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  1. I. K. El Zawawi
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El Zawawi, I.K. Investigation of CdSe x Te1−x : Te composite thin films. Journal of Materials Science: Materials in Electronics 14, 13–19 (2003). https://doi.org/10.1023/A:1021519413844

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