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Ac conduction in Al/Sb2Pb1Se7/Al devices

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Czechoslovak Journal of Physics Aims and scope

Abstract

Metal-glass-metal (MGM) thin film devices are prepared using vacuum deposition of Sb2Pb1Se7 compound. The variation of ac conductance as a function of thickness of films, temperature and frequency is studied. The observed characteristics are explained on the basis of Co-related Barrier Hopping (CBH) of bipolaron. It is shown that the theoretical curve generated using the first order approximation gives excellent fitting with the experimental curve.

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Authors and Affiliations

  1. Solid State Electronics Laboratory, Department of Physics, The Institute of Science, 15, Madam Cama Road, 400032, Mumbai, India

    Shaila Wagle & Vinay Shirodkar

Authors
  1. Shaila Wagle
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  2. Vinay Shirodkar
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Wagle, S., Shirodkar, V. Ac conduction in Al/Sb2Pb1Se7/Al devices. Czech J Phys 50, 829–839 (2000). https://doi.org/10.1023/A:1021426430136

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  • DOI: https://doi.org/10.1023/A:1021426430136

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