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Determination of the Melt Undercooling Required for Producing Al x Ga y In1 – x – y Sb1 – z Bi z  /InSb Heterostructures

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Abstract

Conditions for temperature-gradient epitaxial growth of Al x Ga y In1 – x – y Sb1 – z Bi z  /InSb heterostructures are examined. The factors are established which determine the initial melt undercooling required for preventing the thermal degradation of the substrate.

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Authors and Affiliations

  1. South Russia State Technical University, ul. Prosveshcheniya 132, Novocherkassk, Rostov oblast, 346400, Russia

    L. S. Lunin, A. V. Blagin & A. A. Barannik

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  1. L. S. Lunin
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  2. A. V. Blagin
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  3. A. A. Barannik
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Lunin, L.S., Blagin, A.V. & Barannik, A.A. Determination of the Melt Undercooling Required for Producing Al x Ga y In1 – x – y Sb1 – z Bi z  /InSb Heterostructures. Inorganic Materials 38, 1203–1205 (2002). https://doi.org/10.1023/A:1021307017606

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