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Hydrogen photoevolution on InGaP polycrystalline and tandem-type electrodes

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Czechoslovak Journal of Physics Aims and scope

Abstract

We report on preparation of p-In1−x Ga x P polycrystalline, p-In0.5 Ga0.5P/p-GaAs, and p-In0.5 Ga0.5P/n-GaAs/n-InP tandem-type cathodes. The photovoltaic efficiency of InGaP tandem type epitaxial electrodes is two times higher than that of polycrystalline photocathodes. The most significant advantage of epitaxial electrodes is in their markedly better corrosion resistance in comparison with polycrystalline photocatodes.

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Authors and Affiliations

  1. Institute of Inorganic Chemistry, Acad. Sci. CR, Pelléova 24, 160 00, Praha 6, Czech Republic

    Jana Bludská & Ivo Jakubec

  2. Institute of Radio Engineering and Electronics, Acad. Sci. CR, Chaberská 57, 182 51, Praha 8, Czech Republic

    Dušan Nohavica

  3. Institute of Physics, Acad. Sci. CR, Na Slovance 2, 182 21, Praha 8, Czech Republic

    Ladislav Pekárek

Authors
  1. Jana Bludská
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  2. Ivo Jakubec
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  3. Dušan Nohavica
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  4. Ladislav Pekárek
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Bludská, J., Jakubec, I., Nohavica, D. et al. Hydrogen photoevolution on InGaP polycrystalline and tandem-type electrodes. Czech J Phys 49, 775–781 (1999). https://doi.org/10.1023/A:1021237107091

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  • DOI: https://doi.org/10.1023/A:1021237107091

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